IPP10N03LB G
MOSFET N-CH 30V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP10N03LB-G is an N-Channel power MOSFET designed for demanding applications. This through-hole component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum ON-resistance (Rds On) of 9.9mOhm at 50A and 10V Vgs, it offers low conduction losses. The device has a gate charge (Qg) of 13nC at 5V and an input capacitance (Ciss) of 1639pF at 15V. Maximum power dissipation is rated at 58W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power control, and power supply applications. The PG-TO220-3-1 package facilitates robust thermal management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1639 pF @ 15 V |
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