IPP100N08N3GHKSA1
MOSFET N-CH 80V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP100N08N3GHKSA1 is an N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 70A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 10mOhm at 46A and 10V, contributing to high power efficiency. With a maximum power dissipation of 100W (Tc), it is suitable for power conversion and motor control applications in automotive and industrial sectors. Key parameters include a gate charge (Qg) of 35nC @ 10V and input capacitance (Ciss) of 2410pF @ 40V. The MOSFET is housed in a PG-TO220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
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