IPP100N06S3L-04
MOSFET N-CH 55V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP100N06S3L-04 is an N-channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 100 A at 25°C, with a maximum power dissipation of 214 W at the same temperature. The Rds(on) is specified at a maximum of 3.8 mOhm at 80 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 362 nC at 10 V and an Input Capacitance (Ciss) of 17270 pF at 25 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 150µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 362 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17270 pF @ 25 V |
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