IPP100N06S3-04
MOSFET N-CH 55V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP100N06S3-04 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 100 A at 25°C (Tc). The low on-resistance (Rds On) of 4.4 mOhm at 80 A and 10 V gate drive ensures efficient power transfer. With a maximum power dissipation of 214 W (Tc), it is suitable for demanding thermal environments. The device utilizes a PG-TO220-3-1 package for through-hole mounting, offering a robust thermal path. Key parameters include a Gate Charge (Qg) of 314 nC at 10 V and input capacitance (Ciss) of 14230 pF at 25 V. This MOSFET is widely employed in automotive, industrial power supplies, and motor control systems where robust switching performance is critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 314 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14230 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
