IPP100N04S4H2AKSA1
MOSFET N-CH 40V 100A TO220-3-1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPP100N04S4H2AKSA1 is an N-channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 100A at 25°C. The device boasts a low on-resistance (Rds On) of 2.7mOhm at 100A and 10V, with a maximum power dissipation of 115W. Its gate charge (Qg) is 90 nC at 10V, and input capacitance (Ciss) is 7180 pF at 25V. Designed for through-hole mounting, it is supplied in a PG-TO220-3-1 package. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for applications in automotive, industrial power control, and electric vehicle charging systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 70µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF @ 25 V |