IPP100N04S303AKSA1
MOSFET N-CH 40V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP100N04S303AKSA1 is an N-Channel Power MOSFET featuring a 40V drain-source voltage rating. This device offers a continuous drain current capability of 100A at 25°C with a maximum power dissipation of 214W. The low on-resistance is specified as 2.8mOhm at 80A and 10V gate drive. Key parameters include a gate charge of 145nC and input capacitance of 9600pF. The MOSFET is housed in a PG-TO220-3-1 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This component is suitable for applications in automotive, industrial power control, and high-power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 25 V |
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