IPP100N04S2L03AKSA2
MOSFET N-CH 40V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP100N04S2L03AKSA2 is an N-channel power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 100A at 25°C, with a maximum power dissipation of 300W (Tc). The Rds On is specified at a maximum of 3.3mOhm at 80A and 10V Vgs. Key parameters include a gate charge (Qg) of 230 nC @ 10V and input capacitance (Ciss) of 6000 pF @ 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. Drive voltages range from 4.5V to 10V, with a maximum Vgs of ±20V. This MOSFET is commonly utilized in power supply units, automotive applications, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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