IPP100N04S2L03AKSA1
MOSFET N-CH 40V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP100N04S2L03AKSA1 is an N-Channel power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C. With a maximum power dissipation of 300W (Tc), it is suitable for demanding thermal environments. The Rds On is specified at a low 3.3mOhm maximum at 80A and 10V gate-source voltage. The device offers a gate charge (Qg) of 230 nC maximum at 10V and an input capacitance (Ciss) of 6000 pF maximum at 25V. It supports gate drive voltages from 4.5V to 10V and has a ±20V maximum gate-source voltage. The IPP100N04S2L03AKSA1 is housed in a PG-TO220-3-1 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This MOSFET finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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