IPP096N03L G
MOSFET N-CH 30V 35A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP096N03L-G is an N-Channel Power MOSFET with a 30V drain-source breakdown voltage and a continuous drain current capability of 35A at 25°C (Tc). This device features a low on-resistance of 9.6mOhm maximum at 30A and 10V Vgs, facilitated by its advanced MOSFET technology. The IPP096N03L-G is housed in a PG-TO220-3 package, suitable for through-hole mounting. Key electrical characteristics include a gate charge of 15 nC maximum at 10V Vgs and an input capacitance of 1600 pF maximum at 15V Vds. With a maximum power dissipation of 42W (Tc) and an operating junction temperature range of -55°C to 175°C, this component is designed for demanding applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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