IPP093N06N3GXKSA1
MOSFET N-CH 60V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP093N06N3GXKSA1 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). Key performance parameters include a low on-resistance (Rds On) of 9.3mOhm at 50A and 10V Vgs, and a gate charge (Qg) of 36nC at 10V. The device is housed in a PG-TO220-3 package for through-hole mounting, offering a maximum power dissipation of 71W (Tc). With an operating junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in automotive, industrial power, and server power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 30 V |
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