IPP093N06N3GHKSA1
MOSFET N-CH 60V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP093N06N3GHKSA1 is an N-channel Power MOSFET designed for high-performance applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 9.3mOhm at 50A and 10V Vgs, contributing to efficient power management. With a maximum power dissipation of 71W (Tc), it is suitable for demanding thermal environments. The PG-TO220-3 package with through-hole mounting facilitates integration into various circuit designs. Key electrical characteristics include a gate charge (Qg) of 36 nC at 10V and input capacitance (Ciss) of 2900 pF at 30V. This MOSFET is commonly utilized in automotive, industrial power control, and power supply applications where robust performance and efficiency are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 30 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
