IPP08CN10N G
MOSFET N-CH 100V 95A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP08CN10N-G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 95A at 25°C case temperature. With a maximum on-resistance (Rds On) of 8.5mOhm at 95A and 10V gate-source voltage, it offers superior conduction losses. The device is packaged in a standard PG-TO220-3 through-hole package, providing a thermal dissipation capability of 167W (Tc). Key electrical parameters include a gate charge (Qg) of 100nC at 10V and input capacitance (Ciss) of 6660pF at 50V. Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in industrial power supplies, automotive systems, and renewable energy inverters.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 50 V |
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