IPP08CN10L G
MOSFET N-CH 100V 98A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP08CN10L-G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 98A at 25°C (Tc). It offers a low on-resistance (Rds On) of 8mOhm at 98A and 10V, optimized for efficient power handling. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 2.4V at 130µA. Key parameters include a maximum power dissipation of 167W (Tc) and a gate charge (Qg) of 90 nC at 10V. The input capacitance (Ciss) is rated at 8610 pF at 50V. This through-hole component is housed in a PG-TO220-3 package and operates within a temperature range of -55°C to 175°C (TJ). It finds application in industries such as automotive and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 98A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 130µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8610 pF @ 50 V |
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