IPP086N10N3GHKSA1
MOSFET N-CH 100V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP086N10N3GHKSA1 is an N-channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vds) and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). Its low on-resistance (Rds On) of 8.6mOhm at 73A and 10V gate-source voltage (Vgs) ensures high efficiency. The MOSFET has a gate charge (Qg) of 55 nC at 10V and an input capacitance (Ciss) of 3980 pF at 50V. Operating within a junction temperature range of -55°C to 175°C, it is housed in a standard PG-TO220-3 package for through-hole mounting. This component is suitable for power supply, motor control, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
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