IPP084N06L3GXKSA1
MOSFET N-CH 60V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP084N06L3GXKSA1 is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The device exhibits a low on-resistance of 8.4mOhm at 50A and 10V, facilitated by a gate-source voltage (Vgs) range of 4.5V to 10V for optimal Rds(on). Key parameters include a 29nC maximum gate charge at 4.5V and 4900pF input capacitance at 30V. Operating across a temperature range of -55°C to 175°C (TJ), the IPP084N06L3GXKSA1 is housed in a standard PG-TO220-3 package suitable for through-hole mounting. This MOSFET finds application in industries such as automotive, industrial power control, and consumer electronics where efficient power management is critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 34µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 30 V |
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