IPP084N06L3GHKSA1
MOSFET N-CH 60V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP084N06L3GHKSA1 is a 60V N-Channel Power MOSFET. This device features a low on-resistance of 8.4mOhm maximum at 50A and 10V Vgs, with a continuous drain current capability of 50A at 25°C. The MOSFET exhibits a gate charge of 29 nC maximum at 4.5V Vgs and an input capacitance of 4900 pF maximum at 30V Vds. Designed for through-hole mounting in a PG-TO220-3 package, it offers a maximum power dissipation of 79W. Operating temperature range is from -55°C to 175°C. This component is commonly utilized in industrial applications such as power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 34µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 30 V |
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