IPP080N03L G
MOSFET N-CH 30V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP080N03L-G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). The low on-resistance (Rds On) of 8mOhm at 30A and 10V (Vgs) minimizes conduction losses. With a maximum power dissipation of 47W (Tc), it is suitable for demanding thermal environments. The device is housed in a PG-TO220-3-1 package for through-hole mounting, facilitating straightforward integration into printed circuit boards. Key electrical characteristics include a gate charge (Qg) of 18 nC at 10V and input capacitance (Ciss) of 1900 pF at 15V. The operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive systems, industrial power supplies, and high-power switching circuits.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
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