IPP07N03LB G
MOSFET N-CH 30V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP07N03LB-G is a 30V N-channel power MOSFET in a PG-TO220-3-1 package. This device features a low on-resistance of 6.6mOhm at 50A and 10V Vgs, and a continuous drain current capability of 50A at 25°C (Tc). With a maximum power dissipation of 94W (Tc), it is suitable for demanding applications. The gate charge is 25 nC at 5V, and input capacitance (Ciss) is 2782 pF at 15V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in automotive, industrial automation, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2782 pF @ 15 V |
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