IPP076N15N5AKSA1
MOSFET N-CH 150V 112A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, IPP076N15N5AKSA1. This through-hole component features a 150V drain-source voltage and a continuous drain current of 112A at 25°C (Tc), with a maximum power dissipation of 214W (Tc). The device exhibits a low on-resistance of 7.6mOhm at 56A and 10V Vgs. Key parameters include a gate charge of 21nC (max) at 10V Vgs and input capacitance of 4700pF (max) at 75V Vds. Designed for demanding applications, this MOSFET is suitable for use in industrial power supplies, automotive electronics, and renewable energy systems. The standard PG-TO220-3 package is supplied in tubes.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 112A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 56A, 10 |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 160µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 75 V |
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