IPP070N08N3 G
MOSFET N-CH 80V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP070N08N3-G is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The low on-resistance (Rds On) of 7 mOhm at 73 A and 10 V gate-source voltage (Vgs) ensures efficient power delivery. With a maximum power dissipation of 136 W (Tc), it is suitable for demanding thermal environments. The device has a gate charge (Qg) of 56 nC at 10 V and input capacitance (Ciss) of 3840 pF at 40 V. Operating temperature ranges from -55°C to 175°C (TJ). The IPP070N08N3-G is packaged in a PG-TO220-3 through-hole configuration. This MOSFET finds utility in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 73A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 73µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3840 pF @ 40 V |
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