IPP070N06N G
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP070N06N-G is a 60V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 7mOhm at 80A and 10V Vgs, contributing to reduced conduction losses. With continuous drain current capability of 80A at 25°C (Tc) and a maximum power dissipation of 250W (Tc), it is suitable for demanding power management tasks. The device offers a gate charge of 118 nC at 10V and an input capacitance of 4100 pF at 30V, facilitating efficient switching. Packaged in a PG-TO220-3 for through-hole mounting, the IPP070N06N-G operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET finds application in industries such as automotive, industrial power supplies, and server power.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 30 V |
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