IPP06CN10N G
MOSFET N-CH 100V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP06CN10N-G is a 100V N-Channel Power MOSFET. Featuring a low Rds(on) of 6.5mOhm at 100A and 10V Vgs, this device offers efficient power switching. The continuous drain current is rated at 100A (Tc) with a maximum power dissipation of 214W (Tc). Key parameters include a gate charge of 139 nC @ 10 V and input capacitance of 9200 pF @ 50 V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3 package suitable for through-hole mounting. This component is utilized in various industrial applications requiring high-performance power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 50 V |
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