IPP06CN10LGXKSA1
MOSFET N-CH 100V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP06CN10LGXKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C. The low on-resistance (Rds On) of 6.2mOhm at 100A and 10V gate-source voltage, coupled with a maximum power dissipation of 214W (Tc), makes it suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 124 nC at 10V and an input capacitance (Ciss) of 11900 pF at 50V. The device operates within a junction temperature range of -55°C to 175°C and is housed in a PG-TO220-3 package for through-hole mounting. This MOSFET is frequently utilized in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 180µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11900 pF @ 50 V |
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