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IPP069N20NM6AKSA1

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IPP069N20NM6AKSA1

TRENCH >=100V

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 200 V 15.3A (Ta), 136A (Tc) 3.8W (Ta), 300W (Tc) Through Hole PG-TO220-3-1

Additional Information

Series: OptiMOS™ 6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs6.3mOhm @ 100A, 15V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 258µA
Supplier Device PackagePG-TO220-3-1
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 100 V
Qualification-

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