IPP065N06LGAKSA1
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series IPP065N06LGAKSA1 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C. This through-hole component, packaged in a PG-TO220-3-1, offers a low on-resistance (Rds On) of 6.5mOhm at 80A and 10V. Key parameters include a gate charge (Qg) of 157 nC at 10V and input capacitance (Ciss) of 5100 pF at 30V. Maximum power dissipation is 250W (Tc). The device operates across a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V. This component finds application in power supply units, industrial automation, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 30 V |
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