IPP065N04N G
MOSFET N-CH 40V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP065N04N-G is an N-channel power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 50A at 25°C (Tc). The low on-resistance (Rds On) of 6.5mOhm at 50A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 68W (Tc), it is suitable for demanding thermal environments.
Key electrical characteristics include a gate charge (Qg) of 34nC at 10V Vgs and an input capacitance (Ciss) of 2800pF at 20V Vds. The device operates with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 4V at 200µA. The IPP065N04N-G is housed in a PG-TO220-3 package, allowing for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in industries such as automotive, industrial power, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 20 V |
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