IPP065N03LGXKSA1
MOSFET N-CH 30V 50A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP065N03LGXKSA1 is an N-Channel Power MOSFET featuring a 30V drain-source voltage rating and a continuous drain current capability of 50A at 25°C (Tc). This device offers a low on-resistance of 6.5mOhm maximum at 30A and 10V Vgs. The IPP065N03LGXKSA1 is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 23 nC maximum at 10V and an input capacitance (Ciss) of 2400 pF maximum at 15V. With a maximum power dissipation of 56W (Tc) and an operating junction temperature range of -55°C to 175°C, this MOSFET is engineered for demanding applications in power supply, automotive, and industrial motor control sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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