IPP065N03LG
N-CHANNEL POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPP065N03LG is an N-channel Power MOSFET from the CoolMOS™ series. This through-hole component features a Drain to Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 50A at 25°C (Tc). The device exhibits a maximum On-state resistance (Rds On) of 6.5mOhm at 30A and 10V Vgs. Key parameters include a maximum gate charge (Qg) of 23 nC at 10 V and input capacitance (Ciss) of 2400 pF at 15 V. With a maximum power dissipation of 56W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for applications in automotive and industrial power supply sectors. The component is supplied in a PG-TO220-3-1 package.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |