IPP062NE7N3GXKSA1
MOSFET N-CH 75V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, IPP062NE7N3GXKSA1, features a 75V drain-source voltage and 80A continuous drain current at 25°C (Tc). This through-hole component, housed in a TO-220-3 package, offers a low on-resistance of 6.2mOhm at 73A and 10V gate-source voltage. Key parameters include a maximum gate charge of 55 nC at 10V and input capacitance of 3840 pF at 37.5V. The device supports a maximum gate-source voltage of ±20V and a threshold voltage of 3.8V at 70µA. With a maximum power dissipation of 136W (Tc) and an operating temperature range of -55°C to 175°C, the IPP062NE7N3GXKSA1 is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 73A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 70µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3840 pF @ 37.5 V |
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