IPP060N06NAKSA1
MOSFET N-CH 60V 17A/45A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPP060N06NAKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 60V drain-to-source voltage and offers a continuous drain current rating of 17A at ambient temperature (Ta) and 45A at case temperature (Tc). With a low on-resistance of 6mOhm at 45A and 10V Vgs, it delivers efficient power handling. The maximum power dissipation is 3W (Ta) and 83W (Tc). Key parameters include a gate charge of 27 nC at 10V and input capacitance of 2000 pF at 30V. The component is housed in a PG-TO220-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET finds application in power supply units, automotive electronics, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 36µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 30 V |
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