IPP05N03LB G
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP05N03LB-G is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 94W (Tc). The device exhibits a low on-resistance of 5.3mOhm at 60A and 10V, supported by a gate drive range from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 25 nC at 5V and an input capacitance (Ciss) of 3209 pF at 15V. The IPP05N03LB-G is housed in a standard PG-TO220-3-1 package, suitable for through-hole mounting. Operating temperature range is specified from -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial, automotive, and power supply applications requiring efficient power switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3209 pF @ 15 V |
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