IPP05N03LA
MOSFET N-CH 25V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP05N03LA is an N-Channel Power MOSFET designed for demanding applications. This component offers a 25V drain-source voltage and a continuous drain current capability of 80A at 25°C, with a maximum power dissipation of 94W. Featuring a low on-resistance of 4.9mOhm at 55A and 10V, the IPP05N03LA minimizes conduction losses. The device supports a gate-source voltage range of +/-20V, with a threshold voltage of 2V at 50µA. Input capacitance (Ciss) is rated at 3110pF maximum at 15V, and gate charge (Qg) is 25nC maximum at 5V. This through-hole device is packaged in a PG-TO220-3 configuration, making it suitable for power management solutions in automotive and industrial sectors. Operating temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3110 pF @ 15 V |
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