IPP05CN10L G
MOSFET N-CH 100V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP05CN10L-G is an N-Channel Power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 100A at 25°C. This device offers a low on-resistance of 5.1mOhm maximum at 100A and 10V Vgs. It supports a gate drive voltage range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. The IPP05CN10L-G has a maximum power dissipation of 300W at 25°C and a maximum gate charge of 163 nC at 10V. Input capacitance (Ciss) is rated at 15600 pF maximum. Packaged in a PG-TO220-3 through-hole configuration, this MOSFET operates across a temperature range of -55°C to 175°C. Its performance characteristics make it suitable for applications in automotive and industrial power switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 163 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15600 pF @ 50 V |
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