IPP057N08N3GXKSA1
MOSFET N-CH 80V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP057N08N3GXKSA1 is an N-channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 80A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 5.7mOhm at 80A and 10V gate-source voltage. With a maximum power dissipation of 150W (Tc), it is suitable for demanding power management tasks. The device utilizes advanced trench technology for reduced on-resistance and gate charge, facilitating efficient switching. Key parameters include a gate charge (Qg) of 69 nC (Max) at 10V and input capacitance (Ciss) of 4750 pF (Max) at 40V. The IPP057N08N3GXKSA1 is housed in a PG-TO220-3 package suitable for through-hole mounting. This MOSFET is commonly employed in automotive, industrial power supplies, and server applications where robust performance and low conduction losses are critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V |
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