IPP057N08N3GHKSA1
MOSFET N-CH 80V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP057N08N3GHKSA1 is an N-Channel Power MOSFET with a drain-source voltage of 80 V and continuous drain current capability of 80 A at 25°C (Tc). This device features a low on-resistance of 5.7 mOhm at 80 A and 10 V Vgs, with a gate charge of 69 nC (max) at 10 V. The input capacitance (Ciss) is 4750 pF (max) at 40 V. Optimized for high-efficiency power conversion, this MOSFET is suitable for applications in automotive, industrial power supplies, and renewable energy systems. The device is housed in a PG-TO220-3 package and supports a maximum power dissipation of 150 W (Tc). It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V |
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