IPP057N06N3GHKSA1
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP057N06N3GHKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C. The low on-resistance (Rds On) of 5.7mOhm at 80A and 10V gate drive voltage ensures efficient power transfer. With a maximum power dissipation of 115W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. Key parameters include a gate charge (Qg) of 82 nC at 10V and input capacitance (Ciss) of 6600 pF at 30V. The component is housed in a PG-TO220-3 package, facilitating through-hole mounting. This MOSFET finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 58µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 30 V |