IPP054NE8NGHKSA2
MOSFET N-CH 85V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP054NE8NGHKSA2 is an N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a drain-source voltage (Vdss) of 85V and a continuous drain current (Id) of 100A at 25°C. With a maximum power dissipation of 300W (Tc), it offers excellent thermal management. The Rds On is minimized to 5.4mOhm at 100A and 10V, ensuring low conduction losses. Key parameters include a gate charge (Qg) of 180 nC @ 10 V and input capacitance (Ciss) of 12100 pF @ 40 V. The operating temperature range is -55°C to 175°C (TJ). This device is commonly utilized in power supply units, motor control, and automotive applications. It is supplied in a PG-TO220-3 package.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12100 pF @ 40 V |
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