IPP052NE7N3GXKSA1
MOSFET N-CH 75V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP052NE7N3GXKSA1 is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 150 W (Tc). The low on-resistance (Rds On) of 5.2 mOhm at 80 A and 10 V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 68 nC at 10 V and input capacitance (Ciss) of 4750 pF at 37.5 V. The MOSFET utilizes Through Hole mounting in a PG-TO220-3-1 package. This component is suitable for demanding applications in automotive and industrial sectors requiring robust power handling capabilities.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 37.5 V |
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