IPP052NE7N3GHKSA1
MOSFET N-CH 75V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPP052NE7N3GHKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). Its low on-resistance is specified as 5.2mOhm at 80A and 10V gate-source voltage (Vgs). The device is housed in a PG-TO220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 68 nC at 10V and input capacitance (Ciss) of 4750 pF at 37.5V. This MOSFET is utilized in demanding sectors such as automotive, industrial power control, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 37.5 V |
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