IPP052N08N5AKSA1
MOSFET N-CH 80V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP052N08N5AKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The device exhibits a low on-resistance (Rds On) of 5.2 mOhm at 80 A and 10 V. Key parameters include a gate charge (Qg) of 53 nC at 10 V and an input capacitance (Ciss) of 3770 pF at 40 V. The MOSFET is housed in a standard PG-TO220-3 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for use in power supply, industrial automation, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 66µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 40 V |
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