IPP052N06L3GXKSA1
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP052N06L3GXKSA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 115W (Tc). Optimized for high current density, it exhibits a low on-resistance (Rds On) of 5mOhm at 80A and 10V. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.2V. Key parameters include a gate charge (Qg) of 50 nC at 4.5V and an input capacitance (Ciss) of 8400 pF at 30V. Supplied in a PG-TO220-3 package for through-hole mounting, this MOSFET is suitable for demanding applications in automotive, industrial power, and server power supplies. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 58µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V |
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