IPP052N06L3GHKSA1
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP052N06L3GHKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 80A at 25°C. The device offers a low on-resistance (Rds On) of 5mOhm at 80A and 10V, with a significant power dissipation capability of 115W. Key parameters include a maximum Gate Charge (Qg) of 50 nC at 4.5V and an Input Capacitance (Ciss) of 8400 pF at 30V. The IPP052N06L3GHKSA1 is housed in a standard PG-TO220-3 package for through-hole mounting. This MOSFET is suitable for use in industrial power supplies, automotive applications, and power management systems. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 58µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V |