IPP050N06N G
MOSFET N-CH 60V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP050N06N-G is a 60V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance (Rds(on)) of 5mOhm at 100A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 100A at 25°C and a maximum power dissipation of 300W (Tc), it is suitable for demanding power management tasks. Key electrical parameters include a gate charge (Qg) of 167 nC at 10V and input capacitance (Ciss) of 6100 pF at 30V. The device operates within a temperature range of -55°C to 175°C and is housed in a PG-TO220-3 package for through-hole mounting. Its robust design makes it applicable in sectors such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 30 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
