IPP04N03LB G
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP04N03LB-G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Vds of 30V and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 107W (Tc). The low on-resistance, specified as 3.8mOhm maximum at 55A and 10V Vgs, minimizes conduction losses. Key parameters include a gate charge (Qg) of 40 nC maximum at 5V Vgs and an input capacitance (Ciss) of 5203 pF maximum at 15V Vds. The device operates within an extended temperature range of -55°C to 175°C (TJ). The IPP04N03LB-G is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. Industries utilizing this component include automotive, industrial automation, and power supply design.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5203 pF @ 15 V |
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