IPP04CN10NGXKSA1
MV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 2 N-Channel Power MOSFET, part number IPP04CN10NGXKSA1, is a high-performance component designed for demanding applications. This through-hole TO-220-3 packaged device offers a 100 V drain-source voltage and a continuous drain current of 100 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). Featuring a low on-resistance of 4.2 mOhm at 100 A and 10 V, this MOSFET utilizes advanced MOSFET technology for efficient power management. Key electrical characteristics include a gate charge of 210 nC at 10 V and an input capacitance of 13800 pF at 50 V. The IPP04CN10NGXKSA1 operates across a temperature range of -55°C to 175°C (TJ). This component is widely utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: OptiMOS™ 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 50 V |
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