IPP048N06L G
MOSFET N-CH 60V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP048N06L-G, offers a 60V drain-source voltage capability and a continuous drain current rating of 100A at 25°C (Tc). This through-hole component features a low on-resistance of 4.7mOhm at 100A and 10V (Vgs), facilitated by a 10V gate drive. Its high power dissipation of 300W (Tc) and a maximum junction temperature of 175°C make it suitable for demanding applications. Key parameters include a gate charge (Qg) of 225 nC at 10V and input capacitance (Ciss) of 7600 pF at 30V. The IPP048N06L-G is housed in a PG-TO220-3-1 package. This device finds application in power management, automotive systems, and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 270µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 30 V |
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