IPP048N04NGXKSA1
MOSFET N-CH 40V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP048N04NGXKSA1, offers a 40V drain-source voltage and a continuous drain current of 70A at 25°C. This through-hole component features a low drain-source on-resistance of 4.8mOhm maximum at 70A and 10V gate-source voltage. The device has a maximum power dissipation of 79W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include input capacitance (Ciss) of 3300pF maximum at 25V and gate charge (Qg) of 41nC maximum at 10V. The IPP048N04NGXKSA1 is suitable for applications in automotive, industrial power supplies, and power management systems. It is supplied in a PG-TO220-3 package.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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