IPP045N10N3GHKSA1
MOSFET N-CH 100V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP045N10N3GHKSA1 is an N-Channel power MOSFET with a drain-source voltage (Vds) of 100V. This device features a low on-resistance (Rds(on)) of 4.5mOhm at a continuous drain current (Id) of 100A and a gate-source voltage (Vgs) of 10V. Designed for high power applications, it offers a maximum power dissipation of 214W (Tc). Key parameters include a gate charge (Qg) of 117nC (max) at 10V and input capacitance (Ciss) of 8410pF (max) at 50V. The IPP045N10N3GHKSA1 utilizes a PG-TO220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
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