IPP042N03LGXKSA1
MOSFET N-CH 30V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPP042N03LGXKSA1 is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current of 70A at 25°C (Tc). With a maximum power dissipation of 79W (Tc), it offers robust performance. The low on-resistance of 4.2mOhm at 30A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 38 nC at 10V Vgs and an input capacitance (Ciss) of 3900 pF at 15V Vds. The IPP042N03LGXKSA1 utilizes a through-hole, PG-TO220-3 package, suitable for demanding thermal management. This MOSFET is specified for operation across a wide temperature range of -55°C to 175°C (TJ). Applications are found in automotive power management, industrial motor control, and power supply units.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
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