IPP042N03LGHKSA1
MOSFET N-CH 30V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP042N03LGHKSA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 70A at 25°C, with a maximum power dissipation of 79W (Tc). The low on-resistance of 4.2mOhm at 30A and 10V Vgs, coupled with a 4.5V to 10V gate drive range, ensures minimal conduction losses. Key parameters include a gate charge of 38nC (max) at 10V and input capacitance of 3900pF (max) at 15V. Packaged in a PG-TO220-3-1 through-hole configuration, this device operates within a temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for automotive, industrial power control, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
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